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	Method of manufacturing a waveguide optical semiconductor device
	YAMADA, KOJI
著作权人	NEOPHOTONICS SEMICONDUCTOR GK
专利号	US20030064536A1
国家	美国
文献子类	发明申请
其他题名	Method of manufacturing a waveguide optical semiconductor device
英文摘要	A method of manufacturing a waveguide optical semiconductor device comprises providing a semiconductor substrate including a lower clad layer, a core layer, an upper clad layer and a contact layer formed on the substrate in that order. Next, the contact layer and a part of the upper clad layer is removed by a dry etching method within a pair of line patterns located in parallel and an independent rectangular pattern located near the line patterns. Then, the remaining upper clad layer is removed by a wet etching method so as to expose the core layer within the line patterns and the independent rectangular pattern. An insulating material is coated on the exposed core layer. Then the insulating material formed on the contact layer is removed within a region located between the pair of line patterns so that a part of the contact layer is exposed. An electrode layer is formed on the exposed contact layer. Finally, a bonding pad layer is formed over the independent rectangular pattern and a part of the electrode layer.
公开日期	2003-04-03
申请日期	2002-08-06
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43441]
专题	半导体激光器专利数据库
作者单位	NEOPHOTONICS SEMICONDUCTOR GK
推荐引用方式 GB/T 7714	YAMADA, KOJI. Method of manufacturing a waveguide optical semiconductor device. US20030064536A1.

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