| Process for producing an epitaxial layer of gallium nitride by the HVPE method | |
| TRASSOUDAINE, AGNES; CADORET, ROBERT; AUJOL, ERIC | |
| 著作权人 | CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) |
| 专利号 | US20030013222A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Process for producing an epitaxial layer of gallium nitride by the HVPE method |
| 英文摘要 | A process for producing an epitaxial layer of gallium nitride (GaN) by hydride vapor-phase epitaxy (HVPE), as well as to the epitaxial layers which can be obtained by this process are provided. Such a process makes it possible to avoid parasitic GaN deposition on the walls of the reactor. |
| 公开日期 | 2003-01-16 |
| 申请日期 | 2001-06-29 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43402]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) |
| 推荐引用方式 GB/T 7714 | TRASSOUDAINE, AGNES,CADORET, ROBERT,AUJOL, ERIC. Process for producing an epitaxial layer of gallium nitride by the HVPE method. US20030013222A1. |
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