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	Direct conversion/sampling at antenna
	POWELL, CLINTON C.
著作权人	MOTOROLA, INC.
专利号	US20020182762A1
国家	美国
文献子类	发明申请
其他题名	Direct conversion/sampling at antenna
英文摘要	High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The fabrication of on chip high frequency communications devices such as direct conversion and sampling circuits with direct interface to high speed compound semiconductor material in integrated circuits for high speed data acquisition and antenna interface is disclosed for direct coupling of RF signals in single chip applications.
公开日期	2002-12-05
申请日期	2001-05-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43399]
专题	半导体激光器专利数据库
作者单位	MOTOROLA, INC.
推荐引用方式 GB/T 7714	POWELL, CLINTON C.. Direct conversion/sampling at antenna. US20020182762A1.

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