Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array

doi:10.1016/j.jallcom.2018.07.066

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院强磁场科学中心

	Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array
	Chen, Xue-Xia 1,2; Xiao, Xu-Hua 1,2,3; Shi, Zhi-Feng 1,2; Du, Rui 1,2; Li, Xin-Jian 1,2
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2018-10-30
卷号	767 页码:368-373
关键词	Gallium nitride Silicon nanoporous pillar array Nanoheterostructure Ultraviolet photodetector
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2018.07.066
通讯作者	Li, Xin-Jian(lixj@zzu.edu.cn)
英文摘要	Using silicon nanoporous pillar array (Si-NPA) as substrate, a kind of GaN/Si nanoheterostructure (GaN/Si-NPA) is prepared by depositing GaN nanocrystallites on Si-NPA with chemical vapor deposition method. The morphology characteristics and optical properties of GaN/Si-NPA are investigated systematically. Based on GaN/ Si-NPA, a self-powered ultraviolet (UV) photodetector (PD) with device structure of ITO/GaN/Si-NPA/sc-Si/Ag is constructed by depositing ITO on GaN layer and silver on single crystal silicon, respectively. At zero bias voltage without an external power supply, GaN/Si-NPA exhibits a responsivity of 0.072 mA/W, a high current on/off ratio of similar to 10(4) (16 mu W/cm(2)) and fast response speeds of 39.98/40.10 ms under an UV light irradiation at 305 nm. The high performance of GaN/Si-NPA is attributed to the built-in electric field in the heterojunction, which is interpreted via building the energy-band diagrams. The results illustrate that GaN/ Si-NPA might be a suitable material system for self-powered UV PDs. (C) 2018 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[61774136] ; National Natural Science Foundation of China[61176044] ; National Natural Science Foundation of China[11504331]
WOS关键词	LIQUID-SOLID MECHANISM ; HIGH-PERFORMANCE ; UV PHOTODETECTOR ; POROUS SILICON ; GROWTH ; HETEROJUNCTION ; PHOTOLUMINESCENCE ; DETECTORS ; EMISSION ; JUNCTION
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000446316500045
资助机构	National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/39584]
专题	合肥物质科学研究院_中科院强磁场科学中心
通讯作者	Li, Xin-Jian
作者单位	1.Zhengzhou Univ, Dept Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China 2.Zhengzhou Univ, Phys Mat Lab, Daxue Rd 75, Zhengzhou 450052, Peoples R China 3.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Chen, Xue-Xia,Xiao, Xu-Hua,Shi, Zhi-Feng,et al. Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,767:368-373.
APA	Chen, Xue-Xia,Xiao, Xu-Hua,Shi, Zhi-Feng,Du, Rui,&Li, Xin-Jian.(2018).Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array.JOURNAL OF ALLOYS AND COMPOUNDS,767,368-373.
MLA	Chen, Xue-Xia,et al."Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array".JOURNAL OF ALLOYS AND COMPOUNDS 767(2018):368-373.