Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array
Chen, Xue-Xia1,2; Xiao, Xu-Hua1,2,3; Shi, Zhi-Feng1,2; Du, Rui1,2; Li, Xin-Jian1,2
刊名JOURNAL OF ALLOYS AND COMPOUNDS
2018-10-30
卷号767页码:368-373
关键词Gallium nitride Silicon nanoporous pillar array Nanoheterostructure Ultraviolet photodetector
ISSN号0925-8388
DOI10.1016/j.jallcom.2018.07.066
通讯作者Li, Xin-Jian(lixj@zzu.edu.cn)
英文摘要Using silicon nanoporous pillar array (Si-NPA) as substrate, a kind of GaN/Si nanoheterostructure (GaN/Si-NPA) is prepared by depositing GaN nanocrystallites on Si-NPA with chemical vapor deposition method. The morphology characteristics and optical properties of GaN/Si-NPA are investigated systematically. Based on GaN/ Si-NPA, a self-powered ultraviolet (UV) photodetector (PD) with device structure of ITO/GaN/Si-NPA/sc-Si/Ag is constructed by depositing ITO on GaN layer and silver on single crystal silicon, respectively. At zero bias voltage without an external power supply, GaN/Si-NPA exhibits a responsivity of 0.072 mA/W, a high current on/off ratio of similar to 10(4) (16 mu W/cm(2)) and fast response speeds of 39.98/40.10 ms under an UV light irradiation at 305 nm. The high performance of GaN/Si-NPA is attributed to the built-in electric field in the heterojunction, which is interpreted via building the energy-band diagrams. The results illustrate that GaN/ Si-NPA might be a suitable material system for self-powered UV PDs. (C) 2018 Elsevier B.V. All rights reserved.
资助项目National Natural Science Foundation of China[61774136] ; National Natural Science Foundation of China[61176044] ; National Natural Science Foundation of China[11504331]
WOS关键词LIQUID-SOLID MECHANISM ; HIGH-PERFORMANCE ; UV PHOTODETECTOR ; POROUS SILICON ; GROWTH ; HETEROJUNCTION ; PHOTOLUMINESCENCE ; DETECTORS ; EMISSION ; JUNCTION
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
出版者ELSEVIER SCIENCE SA
WOS记录号WOS:000446316500045
资助机构National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/39584]  
专题合肥物质科学研究院_中科院强磁场科学中心
通讯作者Li, Xin-Jian
作者单位1.Zhengzhou Univ, Dept Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China
2.Zhengzhou Univ, Phys Mat Lab, Daxue Rd 75, Zhengzhou 450052, Peoples R China
3.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714
Chen, Xue-Xia,Xiao, Xu-Hua,Shi, Zhi-Feng,et al. Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,767:368-373.
APA Chen, Xue-Xia,Xiao, Xu-Hua,Shi, Zhi-Feng,Du, Rui,&Li, Xin-Jian.(2018).Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array.JOURNAL OF ALLOYS AND COMPOUNDS,767,368-373.
MLA Chen, Xue-Xia,et al."Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array".JOURNAL OF ALLOYS AND COMPOUNDS 767(2018):368-373.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace