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	Add Fail-Safe Shoot-Through Protection To Power MOSFET.
	DegangXiad-xia@ti.com; DongjieChengdcheng@ti.com; Hahn,Dennisd-hahn@ti.com
刊名	Electronic design
	2008
卷号	Vol.56 No.5页码:82-84
关键词	HIGH technology industries INFORMATION technology METAL oxide semiconductor field-effect transistors ELECTRONIC circuits ELECTRONIC systems TOPOLOGYELECTRONIC controllers SEMICONDUCTORSELECTRIC current regulators
ISSN号	0013-4872
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6758442
专题	上海电子信息职业技术学院
作者单位	1 Texas Instruments Inc., Dallas, Texas
推荐引用方式 GB/T 7714	DegangXiad-xia@ti.com,DongjieChengdcheng@ti.com,Hahn,Dennisd-hahn@ti.com. Add Fail-Safe Shoot-Through Protection To Power MOSFET.[J]. Electronic design,2008,Vol.56 No.5:82-84.
APA	DegangXiad-xia@ti.com,DongjieChengdcheng@ti.com,&Hahn,Dennisd-hahn@ti.com.(2008).Add Fail-Safe Shoot-Through Protection To Power MOSFET..Electronic design,Vol.56 No.5,82-84.
MLA	DegangXiad-xia@ti.com,et al."Add Fail-Safe Shoot-Through Protection To Power MOSFET.".Electronic design Vol.56 No.5(2008):82-84.

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