Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals | |
Lu J; Zhang ZB(张自兵)![]() ![]() | |
2005-10-16 | |
会议名称 | 3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA |
卷号 | 292 |
期号 | 2 |
页码 | 519-522 |
通讯作者 | 陈启生 |
中文摘要 | The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation. |
收录类别 | CPCI-S |
会议录 | Journal of Crystal Growth
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学科主题 | 力学 |
语种 | 英语 |
ISSN号 | 0022-0248 |
WOS记录号 | WOS:000239481000077 |
内容类型 | 会议论文 |
源URL | [http://dspace.imech.ac.cn/handle/311007/13927] ![]() |
专题 | 力学研究所_力学所知识产出(1956-2008) |
推荐引用方式 GB/T 7714 | Lu J,Zhang ZB,Chen QS. Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals[C]. 见:3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA. |
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