Growth and characteristics of carbon doped InxGa1-xAs by MOMBE | |
Qi, Ming; Luo, Jinsheng; Shirakashi, J.; Yamada, T.; Nozaki, S.; Takahashi, K.; Tokumitsu, E.; Konagai, M. | |
刊名 | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
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1993 | |
卷号 | 14期号:7页码:402-409 |
ISSN号 | 0253-4177 |
URL标识 | 查看原文 |
收录类别 | SCOPUS ; EI ; CSCD |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6649051 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Qi, Ming,Luo, Jinsheng,Shirakashi, J.,et al. Growth and characteristics of carbon doped InxGa1-xAs by MOMBE[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,1993,14(7):402-409. |
APA | Qi, Ming.,Luo, Jinsheng.,Shirakashi, J..,Yamada, T..,Nozaki, S..,...&Konagai, M..(1993).Growth and characteristics of carbon doped InxGa1-xAs by MOMBE.Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,14(7),402-409. |
MLA | Qi, Ming,et al."Growth and characteristics of carbon doped InxGa1-xAs by MOMBE".Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 14.7(1993):402-409. |
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