Monte Carlo simulation of high-gain GaAs photoconductive semiconductor switches | |
Shi, Wei; Liang, Zhenxian; Feng, Jun | |
刊名 | Kao Neng Wu Li Yu Ho Wu Li/High Energy Physics and Nuclear Physics
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1998 | |
卷号 | 22期号:4页码:1-3 |
ISSN号 | 0254-3052 |
URL标识 | 查看原文 |
收录类别 | EI ; CSCD |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6634603 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Shi, Wei,Liang, Zhenxian,Feng, Jun. Monte Carlo simulation of high-gain GaAs photoconductive semiconductor switches[J]. Kao Neng Wu Li Yu Ho Wu Li/High Energy Physics and Nuclear Physics,1998,22(4):1-3. |
APA | Shi, Wei,Liang, Zhenxian,&Feng, Jun.(1998).Monte Carlo simulation of high-gain GaAs photoconductive semiconductor switches.Kao Neng Wu Li Yu Ho Wu Li/High Energy Physics and Nuclear Physics,22(4),1-3. |
MLA | Shi, Wei,et al."Monte Carlo simulation of high-gain GaAs photoconductive semiconductor switches".Kao Neng Wu Li Yu Ho Wu Li/High Energy Physics and Nuclear Physics 22.4(1998):1-3. |
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