Broadband external cavity tunable quantum dot lasers with low injection current density

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	Broadband external cavity tunable quantum dot lasers with low injection current density
	Wang WY; Jin P
刊名	optics express
	2010
卷号	18 期号:9 页码:8916-8922
关键词	LIGHT-EMITTING-DIODES NM TUNING RANGE SUPERLUMINESCENT DIODES WELL LASER EMISSION SPECTROSCOPY SPECTRUM
通讯作者	lv, xq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: pengjin@red.semi.ac.cn
合作状况	其它
中文摘要	broadband grating-coupled external cavity laser, based on inas/gaas quantum dots, is achieved. the device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 a/cm(2)). the tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. the effects of cavity length and antireflection facet coating on device performance are studied. it is shown that antireflection facet coating expands the tuning bandwidth up to similar to 150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.
英文摘要	broadband grating-coupled external cavity laser, based on inas/gaas quantum dots, is achieved. the device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 a/cm(2)). the tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. the effects of cavity length and antireflection facet coating on device performance are studied. it is shown that antireflection facet coating expands the tuning bandwidth up to similar to 150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24t07:10:15z no. of bitstreams: 1 broadband external cavity tunable quantum dot lasers with low injection current density.pdf: 895397 bytes, checksum: 69090b01b5108195ca07d2a5d8895a25 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24t07:17:33z (gmt) no. of bitstreams: 1 broadband external cavity tunable quantum dot lasers with low injection current density.pdf: 895397 bytes, checksum: 69090b01b5108195ca07d2a5d8895a25 (md5); made available in dspace on 2010-05-24t07:17:33z (gmt). no. of bitstreams: 1 broadband external cavity tunable quantum dot lasers with low injection current density.pdf: 895397 bytes, checksum: 69090b01b5108195ca07d2a5d8895a25 (md5) previous issue date: 2010; national basic research program of china 2006cb604904 national natural science foundation of china 60976057 60876086 60776037 60676029; 其它
学科主题	半导体材料
收录类别	SCI
资助信息	national basic research program of china 2006cb604904 national natural science foundation of china 60976057 60876086 60776037 60676029
语种	英语
公开日期	2010-05-24
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11243]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wang WY,Jin P. Broadband external cavity tunable quantum dot lasers with low injection current density[J]. optics express,2010,18(9):8916-8922.
APA	Wang WY,&Jin P.(2010).Broadband external cavity tunable quantum dot lasers with low injection current density.optics express,18(9),8916-8922.
MLA	Wang WY,et al."Broadband external cavity tunable quantum dot lasers with low injection current density".optics express 18.9(2010):8916-8922.