InN layers grown by MOCVD on SrTiO3 substrates

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	InN layers grown by MOCVD on SrTiO3 substrates
	Jia CH; Zhou XL
刊名	journal of crystal growth, 312 (3): jan 15 2010
	2010
卷号	312 期号:3 页码:373-377
关键词	TiO3 Growth behavior MOCVD InN 了CHEMICAL-VAPOR-DEPOSITION PHASE EPITAXY PRESSURE
通讯作者	chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail address: yhchen@red.semi.ac.cn
合作状况	其它
英文摘要	epitaxial wurtzite inn thin films have been grown by metal-organic chemical vapor deposition on (1 1 1) srtio3 (sto) substrates. interestingly, twin domain epitaxy induced by the surface reconstruction of sto is observed with the in-plane orientation relationships of [(1) over bar 1 0 0]inn parallel to [<(1)over bar > 1 0]sto and [2 <(1 1)over bar > 0]inn parallel to[<(1)over bar > 1 0]sto, which is helpful to release the strain. the inn films on sto substrates exhibit a strong photoluminescence emission around 0.78 ev. particularly, using sto substrates opens up a possibility to integrate inn with the functional oxides. (c) 2009 elsevier b.v. all rights reserved; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-13t15:44:34z no. of bitstreams: 1 inn layers grown by mocvd on srtio3 substrates.pdf: 595211 bytes, checksum: 20efa2058b2a1283811ae6be18aa6df5 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-13t16:04:44z (gmt) no. of bitstreams: 1 inn layers grown by mocvd on srtio3 substrates.pdf: 595211 bytes, checksum: 20efa2058b2a1283811ae6be18aa6df5 (md5); made available in dspace on 2010-04-13t16:04:44z (gmt). no. of bitstreams: 1 inn layers grown by mocvd on srtio3 substrates.pdf: 595211 bytes, checksum: 20efa2058b2a1283811ae6be18aa6df5 (md5) previous issue date: 2010; 973 program 2006cb604908 2006cb921607；national natural science foundation of china 60625402 60990313; 其它
学科主题	半导体材料
收录类别	SCI
资助信息	973 program 2006cb604908 2006cb921607；national natural science foundation of china 60625402 60990313
语种	英语
公开日期	2010-04-13
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11164]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Jia CH,Zhou XL. InN layers grown by MOCVD on SrTiO3 substrates[J]. journal of crystal growth, 312 (3): jan 15 2010,2010,312(3):373-377.
APA	Jia CH,&Zhou XL.(2010).InN layers grown by MOCVD on SrTiO3 substrates.journal of crystal growth, 312 (3): jan 15 2010,312(3),373-377.
MLA	Jia CH,et al."InN layers grown by MOCVD on SrTiO3 substrates".journal of crystal growth, 312 (3): jan 15 2010 312.3(2010):373-377.