A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

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	A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission
	Jin P
刊名	chinese physics b
	2010
卷号	19 期号:1 页码:art. no. 018104
关键词	quantum-dot tunable laser external cavity broadband tuning NM TUNING RANGE SUPERLUMINESCENT DIODES LIGHT-SOURCE WELL LASER SPECTROSCOPY SPECTRUM
通讯作者	jin, p, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. e-mail address: pengjin@red.semi.ac.cn
合作状况	其它
英文摘要	a broadband external cavity tunable laser is realized by using a broad-emitting spectral inas/gaas quantum dot (qd) gain device. a tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 ka/cm(2) only by utilizing the light emission from the ground state of qds. this large tunable range only covers the qd ground-state emission and is related to the inhomogeneous size distribution of qds. no excited state contributes to the tuning bandwidth. the application of the qd gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. by the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running qd gain device.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-04t15:32:23z no. of bitstreams: 1 61.pdf: 113430 bytes, checksum: 20641b6a2b4ab3ffbabe818188c452d0 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-04t15:34:18z (gmt) no. of bitstreams: 1 61.pdf: 113430 bytes, checksum: 20641b6a2b4ab3ffbabe818188c452d0 (md5); made available in dspace on 2010-04-04t15:34:18z (gmt). no. of bitstreams: 1 61.pdf: 113430 bytes, checksum: 20641b6a2b4ab3ffbabe818188c452d0 (md5) previous issue date: 2010; national basic research program of china 2006cb604904; national natural science foundation of china 60976057 60876086 60776037; 其它
学科主题	半导体材料
收录类别	SCI
资助信息	national basic research program of china 2006cb604904; national natural science foundation of china 60976057 60876086 60776037
语种	英语
公开日期	2010-04-04
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10207]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Jin P. A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission[J]. chinese physics b,2010,19(1):art. no. 018104.
APA	Jin P.(2010).A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission.chinese physics b,19(1),art. no. 018104.
MLA	Jin P."A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission".chinese physics b 19.1(2010):art. no. 018104.