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	Reliability investigation of DC characteristics under emitter-base reverse-bias stress in single-mesa Si/SiGe/Si HBTs grown by molecular beam epitaxy (MBE)
	Zhang, Wan-Rong; Wang, Li-Xin; Li, Zhi-Guo; Cui, Fu-Xian; Luo, Jin-Sheng; Sun, Yinghua; Chen, Jianxin; Shen, Guang-Di
	2001
卷号	1
DOI	10.1109/ICSICT.2001.981556
页码	620-622
收录类别	SCOPUS ; EI
会议录	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/6620024
专题	西安交通大学
推荐引用方式 GB/T 7714	Zhang, Wan-Rong,Wang, Li-Xin,Li, Zhi-Guo,et al. Reliability investigation of DC characteristics under emitter-base reverse-bias stress in single-mesa Si/SiGe/Si HBTs grown by molecular beam epitaxy (MBE)[C]. 见:.

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