| Modeling of subthreshold characteristics of deep-submicrometer FD devices | |
| Cheng, Bin-Jie; Shao, Zhi-Biao; Tang, Tian-Tong; Shen, Wen-Zhen; Zhao, Wen-Kui | |
| 刊名 | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
 |
| 2001 | |
| 卷号 | 22期号:7页码:908-914 |
| 关键词 | DIBL effect FD device Model of subthreshold region Surface potential |
| ISSN号 | 0253-4177 |
| URL标识 | 查看原文 |
| 收录类别 | SCOPUS ; EI ; CSCD |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6618625 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Cheng, Bin-Jie,Shao, Zhi-Biao,Tang, Tian-Tong,et al. Modeling of subthreshold characteristics of deep-submicrometer FD devices[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2001,22(7):908-914. |
| APA | Cheng, Bin-Jie,Shao, Zhi-Biao,Tang, Tian-Tong,Shen, Wen-Zhen,&Zhao, Wen-Kui.(2001).Modeling of subthreshold characteristics of deep-submicrometer FD devices.Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,22(7),908-914. |
| MLA | Cheng, Bin-Jie,et al."Modeling of subthreshold characteristics of deep-submicrometer FD devices".Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 22.7(2001):908-914. |
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