Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application

	Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application
	Li Yan
刊名	applied physics letters
	2010
卷号	96 期号:21 页码:213505
合作状况	其它
英文摘要	submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07t01:33:41z no. of bitstreams: 1 applphyslett_96_213505.pdf: 1153920 bytes, checksum: 69931d8deb797813dd478b5dd0e292c0 (md5); submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07t01:33:41z no. of bitstreams: 1 applphyslett_96_213505.pdf: 1153920 bytes, checksum: 69931d8deb797813dd478b5dd0e292c0 (md5); 其它
学科主题	微电子学
收录类别	其他
语种	中文
公开日期	2010-06-07 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11291]
专题	半导体研究所_半导体集成技术工程研究中心
推荐引用方式 GB/T 7714	Li Yan. Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application[J]. applied physics letters,2010,96(21):213505.
APA	Li Yan.(2010).Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application.applied physics letters,96(21),213505.
MLA	Li Yan."Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application".applied physics letters 96.21(2010):213505.