Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

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	Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications
	Li Y
刊名	nanotechnology
	2010
卷号	21 期号:7 页码:art. no. 075303
关键词	FOCUSED-ION-BEAM
通讯作者	wang, xf, chinese acad sci, inst semicond, engn res ctr semicond integrated technol, beijing 100083, peoples r china. e-mail address: jyzhang08@semi.ac.cn ; wangxiaofeng@semi.ac.cn ; fhyang@red.semi.ac.cn
合作状况	其它
英文摘要	a new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. there is no length limit for the nano-gap electrode and the nano-channel. the method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-05t08:06:42z no. of bitstreams: 1 49.pdf: 674942 bytes, checksum: c387362417d1bd25fde3a6f1804b9e91 (md5); submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-05t08:06:42z no. of bitstreams: 1 49.pdf: 674942 bytes, checksum: c387362417d1bd25fde3a6f1804b9e91 (md5); national high-tech research and development program (863) 2008aa031402；national natural science foundation of china 60606024; 其它
学科主题	微电子学
收录类别	SCI
资助信息	national high-tech research and development program (863) 2008aa031402；national natural science foundation of china 60606024
语种	英语
公开日期	2010-04-05 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10217]
专题	半导体研究所_半导体集成技术工程研究中心
推荐引用方式 GB/T 7714	Li Y. Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications[J]. nanotechnology,2010,21(7):art. no. 075303.
APA	Li Y.(2010).Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications.nanotechnology,21(7),art. no. 075303.
MLA	Li Y."Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications".nanotechnology 21.7(2010):art. no. 075303.