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	High repetition rate passive Q-switching of diode-pumped Nd:GdVO 4 laser at 912 nm with V3+:YAG as the saturable absorber
	Yang, H.W.[1]; Huang, H.T.[2]; He, J.L.[2]; Liu, S.D.[2]; Liu, F.Q.[2]; Yang, X.Q.[2]; Xu, J.L.[2]; Yang, J.F.[2]; Zhang, B.T.[2]
	2011
卷号	21期号:1页码:66-69
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6602201
专题	山东师范大学
作者单位	1.[1] College of Physics and Electronics, Shandong Normal University, Ji'nan 250014, China 2.[2] State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Ji'nan 250100, China
推荐引用方式 GB/T 7714	Yang, H.W.[1],Huang, H.T.[2],He, J.L.[2],et al. High repetition rate passive Q-switching of diode-pumped Nd:GdVO 4 laser at 912 nm with V3+:YAG as the saturable absorber[J],2011,21(1):66-69.
APA	Yang, H.W.[1].,Huang, H.T.[2].,He, J.L.[2].,Liu, S.D.[2].,Liu, F.Q.[2].,...&Zhang, B.T.[2].(2011).High repetition rate passive Q-switching of diode-pumped Nd:GdVO 4 laser at 912 nm with V3+:YAG as the saturable absorber.,21(1),66-69.
MLA	Yang, H.W.[1],et al."High repetition rate passive Q-switching of diode-pumped Nd:GdVO 4 laser at 912 nm with V3+:YAG as the saturable absorber".21.1(2011):66-69.

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