Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth | |
Xu B | |
2006 | |
会议名称 | 11th conference on defects recognition imaging and physics in semiconductors |
会议日期 | sep 13-19, 2005 |
会议地点 | beijing, peoples r china |
关键词 | Monte Carlo simulation |
页码 | 9 (1-3): 31-35 |
通讯作者 | zhao, c, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: czhao@semi.ac.cn |
中文摘要 | performing an event-based continuous kinetic monte carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (qds). the relative positions between the qds and the dislocations are studied. the stress effects to the growth of the qds are considered in simulation. the simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor qds. (c) 2006 elsevier ltd. all rights reserved. |
英文摘要 | performing an event-based continuous kinetic monte carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (qds). the relative positions between the qds and the dislocations are studied. the stress effects to the growth of the qds are considered in simulation. the simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor qds. (c) 2006 elsevier ltd. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; beijing inst petrochem & technol, dept math & phys, beijing 102617, peoples r china |
收录类别 | CPCI(ISTP) |
会议录 | materials science in semiconductor processing |
会议录出版者 | elsevier sci ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
会议录出版地 | the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england |
学科主题 | 半导体材料 |
语种 | 英语 |
ISSN号 | 1369-8001 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/9992] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Xu B. Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth[C]. 见:11th conference on defects recognition imaging and physics in semiconductors. beijing, peoples r china. sep 13-19, 2005. |
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