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	Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)
	Wang YL ; Wu J ; Chen YH ; Wang ZG ; Zeng YP
	2004
会议名称	13th international conference on semiconducting and insulating materials (simc xiii)
会议日期	sep 20-25, 2004
会议地点	beijing, peoples r china
关键词	LAYER-ORDERING ORIENTATION
页码	238-241
通讯作者	wang, yl, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china.
中文摘要	the self-organized inas/in0.52al0.48as nanostructure were grown on inp (001) using molecular beam epitaxy (mbe). the nanostructure has been studied using transmission electron microscopy (tem) and high resolution transmission electron microscopy (hrtem). the edge dislocations with the burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. the results show that in the region near an edge dislocation, no inas wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. the mechanisms for the formation of the [001]/2 edge dislocations were discussed.
英文摘要	the self-organized inas/in0.52al0.48as nanostructure were grown on inp (001) using molecular beam epitaxy (mbe). the nanostructure has been studied using transmission electron microscopy (tem) and high resolution transmission electron microscopy (hrtem). the edge dislocations with the burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. the results show that in the region near an edge dislocation, no inas wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. the mechanisms for the formation of the [001]/2 edge dislocations were discussed.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ.; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
收录类别	其他
会议主办者	ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ.
会议录	smic-xiii 2004 13th international conference on semiconducting & insulating materials
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	0-7803-8668-x
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9926]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang YL,Wu J,Chen YH,et al. Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)[C]. 见:13th international conference on semiconducting and insulating materials (simc xiii). beijing, peoples r china. sep 20-25, 2004.

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