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	Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice
	Jin P; Xu B
	2004
会议名称	13th international conference on semiconducting and insulating materials (simc xiii)
会议日期	sep 20-25, 2004
会议地点	beijing, peoples r china
关键词	QUANTUM DOTS
页码	131-134
通讯作者	cui, cx, chinese acad sci, inst semicond, lab semicond mat sci, pob 912, beijing 100083, peoples r china.
中文摘要	a promising approach for positioning of inas islands on (110)gaas is demonstrated. by combining self-assembly of quantum dots with solid source molecular beam epitaxy (mbe) on cleaved edge of ingaas/gaas superlattice (sl), linear alignment of inas islands on the ingaas strain layers have been fabricated the cleaved edge of ingaas/gaas sl acts as strain nanopattern for inas selective growth. indium atoms incident on the surface will preferentially migrate to ingaas regions where favorable bonding sites are available. the strain nanopattern's effect is studied by the different indium fraction and thickness of inxga1-xas/gaas sl. the ordering of the inas islands is found to depend on the properties of the underlying ingaas strain layers.
英文摘要	a promising approach for positioning of inas islands on (110)gaas is demonstrated. by combining self-assembly of quantum dots with solid source molecular beam epitaxy (mbe) on cleaved edge of ingaas/gaas superlattice (sl), linear alignment of inas islands on the ingaas strain layers have been fabricated the cleaved edge of ingaas/gaas sl acts as strain nanopattern for inas selective growth. indium atoms incident on the surface will preferentially migrate to ingaas regions where favorable bonding sites are available. the strain nanopattern's effect is studied by the different indium fraction and thickness of inxga1-xas/gaas sl. the ordering of the inas islands is found to depend on the properties of the underlying ingaas strain layers.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	其他
会议主办者	ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ.
会议录	smic-xiii 2004 13th international conference on semiconducting & insulating materials
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	0-7803-8668-x
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9918]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P,Xu B. Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice[C]. 见:13th international conference on semiconducting and insulating materials (simc xiii). beijing, peoples r china. sep 20-25, 2004.

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