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	Studies on distribution of element contents in transient layer at interface between boron-doped diamond film electrode and tantalum substrate
	Liang, Jiachang; Gao, Chengyao; Zhang, Liping; Jiang, Lihui; Yang, Zhengquan; Wang, Zhiping; Ji, Chaohui; Le, Xiaoyun; Rong, Cuihua; Zhang, Jian
刊名	APPLIED SURFACE SCIENCE
	2011
卷号	257页码:6063-6067
关键词	Microstructure of continuous transient layer Boron-doped diamond film Rutherford backscattering
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2011.01.129
URL标识	查看原文
收录类别	SCIE ; EI
WOS记录号	WOS:000288646900024
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6588190
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Liang, Jiachang,Gao, Chengyao,Zhang, Liping,et al. Studies on distribution of element contents in transient layer at interface between boron-doped diamond film electrode and tantalum substrate[J]. APPLIED SURFACE SCIENCE,2011,257:6063-6067.
APA	Liang, Jiachang.,Gao, Chengyao.,Zhang, Liping.,Jiang, Lihui.,Yang, Zhengquan.,...&Zhang, Jian.(2011).Studies on distribution of element contents in transient layer at interface between boron-doped diamond film electrode and tantalum substrate.APPLIED SURFACE SCIENCE,257,6063-6067.
MLA	Liang, Jiachang,et al."Studies on distribution of element contents in transient layer at interface between boron-doped diamond film electrode and tantalum substrate".APPLIED SURFACE SCIENCE 257(2011):6063-6067.

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