Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors | |
Wang Y![]() ![]() ![]() ![]() | |
2008 | |
会议名称 | 9th international conference on solid-state and integrated-circuit technology |
会议日期 | oct 20-23, 2008 |
会议地点 | beijing, peoples r china |
关键词 | DEVICES |
页码 | vols 1-4: 393-395 |
通讯作者 | wang, y, chinese acad sci, res ctr semicond integrated technol, inst semicond, pob 912, beijing 100083, peoples r china. |
中文摘要 | the traditional monostable-bistable transition logic element (mobile) structure is usually composed of resonant tunneling diodes (rtd). this letter describes a new type mobile structure consisting of single-electron transistors (i.e. set-mobile). the analytical model of single-electron transistors ( set) has been considered three states (including an excited state) of the discrete quantum energy levels. the simulation results show negative differential conductance (ndc) characteristics in i-ds-v-ds curve. the set-mobile utilizing ndc characteristics can successfully realize the basic logic functions as the rtd-mobile. |
英文摘要 | the traditional monostable-bistable transition logic element (mobile) structure is usually composed of resonant tunneling diodes (rtd). this letter describes a new type mobile structure consisting of single-electron transistors (i.e. set-mobile). the analytical model of single-electron transistors ( set) has been considered three states (including an excited state) of the discrete quantum energy levels. the simulation results show negative differential conductance (ndc) characteristics in i-ds-v-ds curve. the set-mobile utilizing ndc characteristics can successfully realize the basic logic functions as the rtd-mobile.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.; [wang, ying; han, weihua; yang, xiang; chen, jianjun; yang, fuhua] chinese acad sci, res ctr semicond integrated technol, inst semicond, beijing 100083, peoples r china |
收录类别 | 其他 |
会议主办者 | ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter. |
会议录 | 2008 9th international conference on solid-state and integrated-circuit technology
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会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
学科主题 | 微电子学 |
语种 | 英语 |
ISBN号 | 978-1-4244-2185-5 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/8272] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Wang Y,Chen JJ,Han WH,et al. Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors[C]. 见:9th international conference on solid-state and integrated-circuit technology. beijing, peoples r china. oct 20-23, 2008. |
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