Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors
Wang Y; Chen JJ; Han WH; Yang X
2008
会议名称9th international conference on solid-state and integrated-circuit technology
会议日期oct 20-23, 2008
会议地点beijing, peoples r china
关键词DEVICES
页码vols 1-4: 393-395
通讯作者wang, y, chinese acad sci, res ctr semicond integrated technol, inst semicond, pob 912, beijing 100083, peoples r china.
中文摘要the traditional monostable-bistable transition logic element (mobile) structure is usually composed of resonant tunneling diodes (rtd). this letter describes a new type mobile structure consisting of single-electron transistors (i.e. set-mobile). the analytical model of single-electron transistors ( set) has been considered three states (including an excited state) of the discrete quantum energy levels. the simulation results show negative differential conductance (ndc) characteristics in i-ds-v-ds curve. the set-mobile utilizing ndc characteristics can successfully realize the basic logic functions as the rtd-mobile.
英文摘要the traditional monostable-bistable transition logic element (mobile) structure is usually composed of resonant tunneling diodes (rtd). this letter describes a new type mobile structure consisting of single-electron transistors (i.e. set-mobile). the analytical model of single-electron transistors ( set) has been considered three states (including an excited state) of the discrete quantum energy levels. the simulation results show negative differential conductance (ndc) characteristics in i-ds-v-ds curve. the set-mobile utilizing ndc characteristics can successfully realize the basic logic functions as the rtd-mobile.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.; [wang, ying; han, weihua; yang, xiang; chen, jianjun; yang, fuhua] chinese acad sci, res ctr semicond integrated technol, inst semicond, beijing 100083, peoples r china
收录类别其他
会议主办者ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.
会议录2008 9th international conference on solid-state and integrated-circuit technology
会议录出版者ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地345 e 47th st, new york, ny 10017 usa
学科主题微电子学
语种英语
ISBN号978-1-4244-2185-5
内容类型会议论文
源URL[http://ir.semi.ac.cn/handle/172111/8272]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wang Y,Chen JJ,Han WH,et al. Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors[C]. 见:9th international conference on solid-state and integrated-circuit technology. beijing, peoples r china. oct 20-23, 2008.
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