Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107

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	Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107
	Gao, HY ; Yan, FW ; Zhang, Y ; Li, JM ; Zeng, YP ; Wang, GH ; Yang, FH
	2008
会议名称	conference on solid state lighting and solar energy technologies
会议日期	nov 12-14, 2007
会议地点	beijing, peoples r china
关键词	pyramidal patterned substrate InGaN/GaN light-emitting diode wet etching
页码	6841: 84107-84107
通讯作者	gao, hy, chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, a35 qinghua e rd, beijing 100083, peoples r china.
中文摘要	an effective approach to enhance the light output power of ingan/gan light emitting diodes (led) was proposed using pyramidal patterned sapphire substrates (pss). the sapphire substrates were patterned by a selective chemical wet etching technique. gan-based leds were fabricated on patterned sapphire substrates through metal organic chemical deposition (mocvd). the leds fabricated on patterned sapphire substrates exhibit excellent device performance compared to the conventional leds fabricated on planar sapphire substrates in the case of the same growth and device fabricating conditions. the light output power of the leds fabricated on patterned sapphire substrates was about 37% higher than that of leds on planar sapphire substrates at an injection current of 20 ma. the significant enhancement is attributable to the improvement of the quality of gan-based epilayers and improvement of the light extraction efficiency by patterned sapphire substrates.
英文摘要	an effective approach to enhance the light output power of ingan/gan light emitting diodes (led) was proposed using pyramidal patterned sapphire substrates (pss). the sapphire substrates were patterned by a selective chemical wet etching technique. gan-based leds were fabricated on patterned sapphire substrates through metal organic chemical deposition (mocvd). the leds fabricated on patterned sapphire substrates exhibit excellent device performance compared to the conventional leds fabricated on planar sapphire substrates in the case of the same growth and device fabricating conditions. the light output power of the leds fabricated on patterned sapphire substrates was about 37% higher than that of leds on planar sapphire substrates at an injection current of 20 ma. the significant enhancement is attributable to the improvement of the quality of gan-based epilayers and improvement of the light extraction efficiency by patterned sapphire substrates.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:55z (gmt). no. of bitstreams: 1 687.pdf: 771884 bytes, checksum: 493472d5bb46d3bde77a8b6ee2185f4e (md5) previous issue date: 2008; spie.; chinese opt soc.; [gao, haiyong; yan, fawang; zhang, yang; li, jinmin; zeng, yiping; wang, guohong; yang, fuhua] chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie.; chinese opt soc.
会议录	solid state lighting and solar energy technologies
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	978-0-8194-7016-4
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/7814]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gao, HY,Yan, FW,Zhang, Y,et al. Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007.