Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer
	Xu B
刊名	journal of vacuum science & technology b
	1997
卷号	15 期号:6 页码:2021-2025
关键词	HETEROSTRUCTURES
ISSN号	1071-1023
通讯作者	jiang c,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	pseudomorphic iny2al1-y2as/in0.73ga0.27as/iny1al1-y1as (y1 greater than or equal to 0.52) modulation-doped heterostructures with an intentional nonlattice-matched buffer layer were successfully grown by molecular beam epitaxy on (100)inp substrates. fourier transform photoluminescence and double crystal x-ray diffraction measurements show a superior crystalline quality in the high in content channel, when in mole fraction increases from y1=0.52 to 0.55 in the iny1al1-y1as buffer layer. in this case, an increasing of 16.3% and 23.5% for conductivity (mu xn(s)) and mobility, related to the strain compensation in the in0.73ga0.27as channel, was achieved, respectively, comparing to the structure containing a well-lattice matched buffer layer. with increasing the mismatch further (y1=0.58), a morphology with cross-hatched pattern was observed due to the onset of a large amount of misfit dislocations, and the electronic characterization is not able to be improved continuously. because we can realize high quality strained p-hemts in a relative wide range of equivalent beam flux (ebf) ratios, the stringent control over the constant ebf is not indispensable on this in-based material system. (c) 1997 american vacuum society.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13314]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer[J]. journal of vacuum science & technology b,1997,15(6):2021-2025.
APA	Xu B.(1997).Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer.journal of vacuum science & technology b,15(6),2021-2025.
MLA	Xu B."Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer".journal of vacuum science & technology b 15.6(1997):2021-2025.