Improvement of Ge self-organized quantum dots by use of Sb surfactant

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	Improvement of Ge self-organized quantum dots by use of Sb surfactant
	Peng CS ; Huang Q ; Cheng WQ ; Zhou JM ; Zhang YH ; Sheng TT ; Tung CH
刊名	applied physics letters
	1998
卷号	72 期号:20 页码:2541-2543
关键词	GROWTH PHOTOLUMINESCENCE CONFINEMENT TEMPERATURE ISLANDS SI(001)
ISSN号	0003-6951
通讯作者	peng cs,chinese acad sci,inst phys,pob 60336,beijing 100080,peoples r china.
中文摘要	a sb-mediated growth technique is developed to deposit ge quantum dots (qds) of small size, high density, and foe of dislocations. these qds were grown at low growth temperature by molecular beam epitaxy. the photoluminescence and absorption properties of these ge qds suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation. (c) 1998 american institute of physics. [s0003-6951(98)00420-3].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13200]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Peng CS,Huang Q,Cheng WQ,et al. Improvement of Ge self-organized quantum dots by use of Sb surfactant[J]. applied physics letters,1998,72(20):2541-2543.
APA	Peng CS.,Huang Q.,Cheng WQ.,Zhou JM.,Zhang YH.,...&Tung CH.(1998).Improvement of Ge self-organized quantum dots by use of Sb surfactant.applied physics letters,72(20),2541-2543.
MLA	Peng CS,et al."Improvement of Ge self-organized quantum dots by use of Sb surfactant".applied physics letters 72.20(1998):2541-2543.