Compatibility relationship among reaction equilibria, equivalence principle of reaction approaches, and silicon contamination in semiconductors | |
Yang R | |
刊名 | journal of physical chemistry b
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1998 | |
卷号 | 102期号:20页码:3986-3992 |
关键词 | GAAS GROWTH |
ISSN号 | 1089-5647 |
通讯作者 | yang r,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
中文摘要 | this paper discovers some shortcomings in the algorithm for the incorporation of si into gaas in the gaas vpe process. these faults arise from neglecting a link, the compatibility relationship, in chemical thermodynamics. the meaning of said relationship is as follows: in an equilibrium complex system, each species can only contribute one and the same quantity (its equilibrium quantity) to the different equilibria of the various reactions involving it; yet even under this restriction, every equilibrium constant is satisfied, and all the reaction equilibria coexist compatibly in the system. only by adding the relationship can the equilibrium theory for the complex system be complete. this paper also tells its position in chemical thermodynamics. such a compatibility concept directly leads to an equivalence principle: in a complex system, a certain species can usually be simultaneously formed by many chemical reactions; when the system has reached equilibrium under fixed environmental conditions, the equilibrium quantity of said species calculated according to each chemical equation of these reactions will be equal and the various reaction approaches will be equivalent, provided that for all the reactants and all the other products of these reactions their equilibrium quantities in the system are respectively taken as corresponding knowns for the calculations, which is extremely useful for seeking a functional relation among the species' equilibrium quantities in a system (si contamination is one of the examples). under the guidance of those arguments, the various schools' algorithms for the si contamination can be uniformized and simplified, and the contamination quantity relation between si and o, two very important impurities, is found. |
学科主题 | 半导体化学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/13194] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Yang R. Compatibility relationship among reaction equilibria, equivalence principle of reaction approaches, and silicon contamination in semiconductors[J]. journal of physical chemistry b,1998,102(20):3986-3992. |
APA | Yang R.(1998).Compatibility relationship among reaction equilibria, equivalence principle of reaction approaches, and silicon contamination in semiconductors.journal of physical chemistry b,102(20),3986-3992. |
MLA | Yang R."Compatibility relationship among reaction equilibria, equivalence principle of reaction approaches, and silicon contamination in semiconductors".journal of physical chemistry b 102.20(1998):3986-3992. |
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