GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

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	GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method
	Li XB ; Sun DZ ; Zhang JP ; Kong MY
刊名	journal of crystal growth
	1998
卷号	191 期号:1-2 页码:31-33
关键词	FILMS
ISSN号	0022-0248
通讯作者	li xb,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china.
中文摘要	high-quality gan epilayers have been grown by gas source molecular beam epitaxy using ammonia as the nitrogen source. during the growth, the growth rate is up to 1.2 mu m/h and can be varied from 0.3 to 1.2 mu m. the unintentional n-type doping as low as 7x10(17) cm(-3) was obtained at room temperature. low-temperature photoluminescence spectrum was dominated by near-edge emission without deep-level related luminescence, indicative of high-quality epilayers. (c) 1998 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13174]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li XB,Sun DZ,Zhang JP,et al. GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method[J]. journal of crystal growth,1998,191(1-2):31-33.
APA	Li XB,Sun DZ,Zhang JP,&Kong MY.(1998).GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method.journal of crystal growth,191(1-2),31-33.
MLA	Li XB,et al."GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method".journal of crystal growth 191.1-2(1998):31-33.