980nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition

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	980nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition
	Yang GW ; Xu ZT ; Ma XY ; Xu JY ; Zhang JM ; Chen LH
刊名	electronics letters
	1998
卷号	34 期号:13 页码:1312-1313
关键词	WAVE-GUIDE EPITAXY DIODES GAINP POWER
ISSN号	0013-5194
通讯作者	yang gw,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china.
中文摘要	the authors report on the fabrication of 980 nm ingaas strained quantum well lasers with hybrid materials of ingaasp as waveguide and algaas as cladding grown by metal organic chemical vapour deposition. the ingaas/ingaasp/algaas diode lasers (100 x 800 mu m) with broadened waveguide structure exhibit a threshold current of 180 ma, a slope efficiency of 1.0 w/a, and a high characteristic temperature coefficient (t-0) of 230 k.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13164]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang GW,Xu ZT,Ma XY,et al. 980nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition[J]. electronics letters,1998,34(13):1312-1313.
APA	Yang GW,Xu ZT,Ma XY,Xu JY,Zhang JM,&Chen LH.(1998).980nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition.electronics letters,34(13),1312-1313.
MLA	Yang GW,et al."980nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition".electronics letters 34.13(1998):1312-1313.