Electronic structures of GaAs/AlAs lateral superlattices

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	Electronic structures of GaAs/AlAs lateral superlattices
	Li SS ; Zhu BF
刊名	journal of physics-condensed matter
	1998
卷号	10 期号:28 页码:6311-6319
关键词	EFFECTIVE-MASS THEORY QUANTUM WIRES OPTICAL ANISOTROPY GAS DEPOSITION EXCITONS GROWTH STATES WELLS ALAS
ISSN号	0953-8984
通讯作者	li ss,ccast,world lab,pob 8730,beijing 100080,peoples r china.
中文摘要	the electronic energy subbands and minigaps in lateral superlattices (lsls) have been calculated by the plane-wave expansion method. the effect of the lateral modulation on the critical well width at which an indirect-direct (x-gamma) optical transition occurs in the lsls is investigated. our theoretical results are in agreement with the available experimental data. totally at variance with the previous variation calculational results, the minigaps between the first two subbands in lsls, as functions of the modulation period, exhibit a maximum value at a specific length and disappear on decreasing the modulation period further. the modulations of several types of lateral potential are also evaluated; the indication is that the out-of-phase modulation on either side of the wells is the strongest while the in-phase modulation is the weakest. our calculations also show that the effect of the difference between the effective masses of the electrons in the different materials on the subband structures is significant.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13160]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li SS,Zhu BF. Electronic structures of GaAs/AlAs lateral superlattices[J]. journal of physics-condensed matter,1998,10(28):6311-6319.
APA	Li SS,&Zhu BF.(1998).Electronic structures of GaAs/AlAs lateral superlattices.journal of physics-condensed matter,10(28),6311-6319.
MLA	Li SS,et al."Electronic structures of GaAs/AlAs lateral superlattices".journal of physics-condensed matter 10.28(1998):6311-6319.