Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure

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	Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure
	Ji Y ; Chen YZ ; Luo KJ ; Zheng HZ ; Li YX ; Li CF ; Cheng WC ; Yang FH
刊名	applied physics letters
	1998
卷号	72 期号:25 页码:3309-3311
关键词	QUANTUM-WELL SCATTERING ELECTRONS ESCAPE
ISSN号	0003-6951
通讯作者	ji y,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	when an intersubband relaxation is involved in vertical transport in a tunneling heterostructure, the magnetic suppression of the intersubband lo or la phonon scattering may also give rise to a noticeable depression of the resonant tunneling current, unrelated to the coulomb correlation effect. the slowdown of the intersubband scattering rate makes fewer electrons able to tunnel resonantly between two adjacent quantum wells (qws) in a three-barrier, two-well heterostructure. the influence of the magnetic field on the intersubband relaxation can be studied in an explicit way by a physical model based on the dynamics of carrier populations in the ground and excited subbands of the incident qw. (c) 1998 american institute of physics. [s0003-6951(98)00925-5].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13148]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ji Y,Chen YZ,Luo KJ,et al. Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure[J]. applied physics letters,1998,72(25):3309-3311.
APA	Ji Y.,Chen YZ.,Luo KJ.,Zheng HZ.,Li YX.,...&Yang FH.(1998).Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure.applied physics letters,72(25),3309-3311.
MLA	Ji Y,et al."Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure".applied physics letters 72.25(1998):3309-3311.