The effects of electric field on the electronic structure of a semiconductor quantum dot

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	The effects of electric field on the electronic structure of a semiconductor quantum dot
	Chang K ; Xia JB
刊名	journal of applied physics
	1998
卷号	84 期号:3 页码:1454-1459
关键词	ABSORPTION CRYSTALLITES STATES TRANSITIONS DEPENDENCE GLASS WELL
ISSN号	0021-8979
通讯作者	chang k,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. 电子邮箱地址: phchang@uxmail.ust.hk
中文摘要	the effect of electric field on the electronic structure of a spherical quantum dot is studied in the framework of the effective-mass envelope-function theory. the dependence of the energy of electron states and hole states on the applied electric field and on the quantum dot size is investigated; the mixing of heavy holes and light holes is taken into account. the selection rule for the optical transition between the conduction band and valence band states is obtained. the exciton binding energies are calculated as functions of the quantum dot radius and the strength of the electric field. (c) 1998 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13146]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chang K,Xia JB. The effects of electric field on the electronic structure of a semiconductor quantum dot[J]. journal of applied physics,1998,84(3):1454-1459.
APA	Chang K,&Xia JB.(1998).The effects of electric field on the electronic structure of a semiconductor quantum dot.journal of applied physics,84(3),1454-1459.
MLA	Chang K,et al."The effects of electric field on the electronic structure of a semiconductor quantum dot".journal of applied physics 84.3(1998):1454-1459.