Thermomagnetic behavior and first order magnetization processes of Sm3Fe29-xTx and Sm3Fe29-xTxN4 (T = V and Cr)

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Thermomagnetic behavior and first order magnetization processes of Sm3Fe29-xTx and Sm3Fe29-xTxN4 (T = V and Cr)
	Han XF ; Wang JL ; He TM ; Lin Q ; Han BS ; Yang FM
刊名	physica status solidi a-applied research
	1998
卷号	168 期号:2 页码:487-493
ISSN号	0031-8965
通讯作者	han xf,chinese acad sci,ctr mat sci,inst semicond,pob 912,beijing 100083,peoples r china.
中文摘要	a systematic investigation of structure and intrinsic magnetic properties of the compounds sm3fe29-xtx (t = v and cr) and their nitrides has been performed. nitrogenation resulted in remarkable improvements in the saturation magnetization and anisotropy fields at 4.2 k and room temperature. first order magnetization processes are observed at around 5.7 t for sm3fe26.7v2.3 and around 2.8 t for sm3fe24.0cr5.0 and sm3fe24.0cr5.0n4, respectively. the spin reorientation of the easy magnetization direction of sm3fe26.7v2.3 is observed at around 230 k. as a preliminary result, the maximum remanence b-r of 0.94 t, the coercivity mu(0)h(c) of 0.75 t, and the maximum energy product (bh) of 108.5 kj/m(3) for the nitride magnet sm3fe26.7v2.3n4 are achieved by ball-milling at 293 k.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13100]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han XF,Wang JL,He TM,et al. Thermomagnetic behavior and first order magnetization processes of Sm3Fe29-xTx and Sm3Fe29-xTxN4 (T = V and Cr)[J]. physica status solidi a-applied research,1998,168(2):487-493.
APA	Han XF,Wang JL,He TM,Lin Q,Han BS,&Yang FM.(1998).Thermomagnetic behavior and first order magnetization processes of Sm3Fe29-xTx and Sm3Fe29-xTxN4 (T = V and Cr).physica status solidi a-applied research,168(2),487-493.
MLA	Han XF,et al."Thermomagnetic behavior and first order magnetization processes of Sm3Fe29-xTx and Sm3Fe29-xTxN4 (T = V and Cr)".physica status solidi a-applied research 168.2(1998):487-493.