Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide

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	Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide
	Lin LY ; Chen NF ; Zhong XR ; He HJ ; Li CJ
刊名	journal of applied physics
	1998
卷号	84 期号:10 页码:5826-5827
关键词	SEMIINSULATING GAAS LEC-GAAS DEFECTS SEGREGATION CARBON BORON
ISSN号	0021-8979
通讯作者	lin ly,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	experimental results have shown the fact that the deep-level centers in semi-insulating gaas decrease with the improvement in stoichiometry. the electrical resistivity doubles when the concentration of el2 centers decreases to a half. the microgravity-growth experiments also show that improved crystal stoichiometry results in a decrease of deep-level centers. (c) 1998 american institute of physics. [s0021-8979(98)04921-4].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13070]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lin LY,Chen NF,Zhong XR,et al. Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide[J]. journal of applied physics,1998,84(10):5826-5827.
APA	Lin LY,Chen NF,Zhong XR,He HJ,&Li CJ.(1998).Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide.journal of applied physics,84(10),5826-5827.
MLA	Lin LY,et al."Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide".journal of applied physics 84.10(1998):5826-5827.