Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials
	Zou LF ; Acosta-Ortiz SE ; Zou LX ; Regalado LE ; Sun DZ ; Wang ZG
刊名	revista mexicana de fisica
	1998
卷号	44 期号:0 页码:93-96
关键词	gas source molecular beam epitaxy thermal stability Si1-xGex HETEROSTRUCTURES STRAIN RELAXATION
ISSN号	0035-001x
通讯作者	zou lf,ctr invest opt ac,unidad aguascalientes,juan montoro 207,zona ctr,aguascalientes 20000,ags,mexico. 电子邮箱地址: lfzou@ags.ciateq.mx
中文摘要	gas source molecular beam epitaxy has been used to grow si1-xgex alloys and si1-xgex/si multi-quantum wells (mqws) on (100) si substrates with si2h6 and geh4 as sources. heterostructures and mqws with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. the structural stability and strain relaxation in si1-xgex/si heterostructures have been investigated, and compared to that in the as ion-implanted si1-xgex epilayers. the results show that the strain relaxation mechanism of the non-implanted si1-xgex epilayers is different from that of the as ion-implanted si1-xgex epilayers.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13026]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zou LF,Acosta-Ortiz SE,Zou LX,et al. Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials[J]. revista mexicana de fisica,1998,44(0):93-96.
APA	Zou LF,Acosta-Ortiz SE,Zou LX,Regalado LE,Sun DZ,&Wang ZG.(1998).Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials.revista mexicana de fisica,44(0),93-96.
MLA	Zou LF,et al."Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials".revista mexicana de fisica 44.0(1998):93-96.