Pressure behavior of deep centers in ZnSxTe1-x alloys

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Pressure behavior of deep centers in ZnSxTe1-x alloys
	Liu NZ ; Li GH ; Zhang W ; Zhu ZM ; Han HX ; Wang ZP ; Ge WK ; Sou IK
刊名	physica status solidi b-basic research
	1999
卷号	211 期号:1 页码:163-169
关键词	ABSORPTION-EDGE STRAINS ZNS
ISSN号	0370-1972
通讯作者	liu nz,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要	we have measured photoluminescence of znsxte1-x alloys (x > 0.7) at 300 k and under hydrostatic pressure up to 7 gpa. the spectra contain only a broad emission band under excitation of the 406.7 nm line. its pressure coefficients are 47, 62 and 45 mev/gpa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. the stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 ev for the three samples, respectively. the small pressure coefficient and large stokes shift indicate that the emission band observed in our samples may correspond to the te isoelectronic center in the znsxte1-x alloy.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13006]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu NZ,Li GH,Zhang W,et al. Pressure behavior of deep centers in ZnSxTe1-x alloys[J]. physica status solidi b-basic research,1999,211(1):163-169.
APA	Liu NZ.,Li GH.,Zhang W.,Zhu ZM.,Han HX.,...&Sou IK.(1999).Pressure behavior of deep centers in ZnSxTe1-x alloys.physica status solidi b-basic research,211(1),163-169.
MLA	Liu NZ,et al."Pressure behavior of deep centers in ZnSxTe1-x alloys".physica status solidi b-basic research 211.1(1999):163-169.