Fabrication of luminescent Ge nanocrystals started from unlayered hydrogenated amorphous SiGe films or hydrogenated amorphous Si hydrogenated amorphous Ge multilayers

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	Fabrication of luminescent Ge nanocrystals started from unlayered hydrogenated amorphous SiGe films or hydrogenated amorphous Si hydrogenated amorphous Ge multilayers
	Xu J ; He ZH ; Chen KJ ; Huang XF ; Feng D
刊名	journal of physics-condensed matter
	1999
卷号	11 期号:6 页码:1631-1637
关键词	VISIBLE PHOTOLUMINESCENCE MATRIX
ISSN号	0953-8984
通讯作者	xu j,nanjing univ,natl lab solid state microstruct,nanjing 210093,peoples r china.
中文摘要	nanocrystalline ge embedded in siox matrix is fabricated by oxidizing hydrogenated amorphous sice alloys or hydrogenated amorphous si/hydrogenated amorphous ge multilayers. the structures before and after oxidation are systematically investigated. visible light emission was observed from both samples. the luminescence peak is located at 2.2 ev which is independent of the starting materials. compared to the luminescence from unlayered samples, the photoluminescence spectrum from multilayered samples has a narrower band width, which can be attributed to the uniform size distribution. the light emission origin is also discussed briefly and a mechanism different from the quantum size effect is suggested.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12992]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu J,He ZH,Chen KJ,et al. Fabrication of luminescent Ge nanocrystals started from unlayered hydrogenated amorphous SiGe films or hydrogenated amorphous Si hydrogenated amorphous Ge multilayers[J]. journal of physics-condensed matter,1999,11(6):1631-1637.
APA	Xu J,He ZH,Chen KJ,Huang XF,&Feng D.(1999).Fabrication of luminescent Ge nanocrystals started from unlayered hydrogenated amorphous SiGe films or hydrogenated amorphous Si hydrogenated amorphous Ge multilayers.journal of physics-condensed matter,11(6),1631-1637.
MLA	Xu J,et al."Fabrication of luminescent Ge nanocrystals started from unlayered hydrogenated amorphous SiGe films or hydrogenated amorphous Si hydrogenated amorphous Ge multilayers".journal of physics-condensed matter 11.6(1999):1631-1637.