Radiative transition in delta-doped GaAs superlattices

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Radiative transition in delta-doped GaAs superlattices
	Tan PH
刊名	journal of infrared and millimeter waves
	1999
卷号	18 期号:1 页码:89-92
关键词	delta-doping superlattices radiative transition SI BAND-GAP
ISSN号	1001-9014
通讯作者	cheng wc,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	radiative transition in delta-doped gaas superlattices with a weak coupling was investigted at low temperature, the experimental results show that the transitions from both electron ground state and excited state to hole state have been observed, based on the effective mass approximation theory, the structures of energy band and photoluminescence spectra for the samples used were calculated. comparing the experiment with theory, a good agreement was abtained.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12982]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Tan PH. Radiative transition in delta-doped GaAs superlattices[J]. journal of infrared and millimeter waves,1999,18(1):89-92.
APA	Tan PH.(1999).Radiative transition in delta-doped GaAs superlattices.journal of infrared and millimeter waves,18(1),89-92.
MLA	Tan PH."Radiative transition in delta-doped GaAs superlattices".journal of infrared and millimeter waves 18.1(1999):89-92.