| A Novel Cross-point MRAM with Diode Selector Capable of High-Density, High-Speed, and Low-Power In-Memory Computation | |
| Ding, Chaoxin; Kang, Wang; Zhang, He; Zhang, Youguang; Zhao, Weisheng | |
| 2015 | |
| 会议名称 | NANOARCH'18: PROCEEDINGS OF THE 14TH IEEE/ACM INTERNATIONAL SYMPOSIUM ON NANOSCALE ARCHITECTURES |
| 会议日期 | 2015-01-01 |
| 关键词 | Cross-point MRAM in-memory computation VCMA |
| 页码 | 72-78 |
| 收录类别 | EI ; CPCI-S |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000457790100014 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6544836 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Ding, Chaoxin,Kang, Wang,Zhang, He,et al. A Novel Cross-point MRAM with Diode Selector Capable of High-Density, High-Speed, and Low-Power In-Memory Computation[C]. 见:NANOARCH'18: PROCEEDINGS OF THE 14TH IEEE/ACM INTERNATIONAL SYMPOSIUM ON NANOSCALE ARCHITECTURES. 2015-01-01. |
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