Wavelength tuning in GaAsAlGaAs quantum wells by InAs submonolayer insertion

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	Wavelength tuning in GaAsAlGaAs quantum wells by InAs submonolayer insertion
	Xu ZY ; Wang J ; Wang Y ; Ge WK ; Li Q ; Li SS ; Henini M
刊名	journal of physics-condensed matter
	1999
卷号	11 期号:17 页码:3629-3633
关键词	OPTICAL-PROPERTIES GAAS DOTS DEPENDENCE SURFACES GROWTH
ISSN号	0953-8984
通讯作者	xu zy,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	wavelength tuning of exciton emissions has been achieved simply by inserting an inas submonolayer at the centre of gaas quantum wells during molecular beam epitaxy growth. photoluminescence measurements show that the emission energy can be effectively tuned from the quantum-well-determined energy down to less than the band gap of gaas, depending on the well width as well as the inas layer thickness. using the effective-mass approximation, the tuning effect can be well predicted theoretically the results reported here may provide an alternative way to tune the wavelength in optoelectronic devices.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12918]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu ZY,Wang J,Wang Y,et al. Wavelength tuning in GaAsAlGaAs quantum wells by InAs submonolayer insertion[J]. journal of physics-condensed matter,1999,11(17):3629-3633.
APA	Xu ZY.,Wang J.,Wang Y.,Ge WK.,Li Q.,...&Henini M.(1999).Wavelength tuning in GaAsAlGaAs quantum wells by InAs submonolayer insertion.journal of physics-condensed matter,11(17),3629-3633.
MLA	Xu ZY,et al."Wavelength tuning in GaAsAlGaAs quantum wells by InAs submonolayer insertion".journal of physics-condensed matter 11.17(1999):3629-3633.