Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers
	Zhuang QD ; Li JM ; Zeng YP ; Pan L ; Chen YH ; Kong MY ; Lin LY
刊名	journal of electronic materials
	1999
卷号	28 期号:5 页码:503-505
关键词	InGaAs GaAs quantum dots infrared absorption self-organization ISLANDS TRANSITIONS X-RAY-DIFFRACTION
ISSN号	0361-5235
通讯作者	zhuang qd,chinese acad sci,inst semicond,novel mat ctr,pob 912,beijing 100083,peoples r china.
中文摘要	self-organized ingaas/gaas quantum dots (qds) stacked multilayers have been prepared by solid source molecular beam epitaxy. cross-sectional transmission electron microscopy shows that the ingaas qds are nearly perfectly vertically aligned in the growth direction [100]. the filtering effect on the qds distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. this indicates the potential of qds multilayer structure for use as infrared photodetector.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12912]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhuang QD,Li JM,Zeng YP,et al. Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers[J]. journal of electronic materials,1999,28(5):503-505.
APA	Zhuang QD.,Li JM.,Zeng YP.,Pan L.,Chen YH.,...&Lin LY.(1999).Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers.journal of electronic materials,28(5),503-505.
MLA	Zhuang QD,et al."Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers".journal of electronic materials 28.5(1999):503-505.