Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)

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	Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)
	Zhao DG
刊名	journal of crystal growth
	1999
卷号	203 期号:1-2 页码:40-44
关键词	AlGaN cubic hexagonal SEM MOVPE GAAS GAN
ISSN号	0022-0248
通讯作者	xu dp,chinese acad sci,inst semicond,natl res ctr optoelect technol,beijing 100083,peoples r china.
中文摘要	cubic algan films were grown on gaas(100) substrates by movpe. scanning electron microscope and photoluminescence were used to analyze the surface morphology and the crystalline quality of the epitaxial layers. we found that both nh, and tega fluxes have a strong effect on the surface morphology of algan films. a model for the lateral growth mechanism is presented to qualitatively explain this effect. the content of hexagonal algan in the cubic algan films was also related to the nh3 flux. (c) 1999 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12908]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG. Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)[J]. journal of crystal growth,1999,203(1-2):40-44.
APA	Zhao DG.(1999).Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE).journal of crystal growth,203(1-2),40-44.
MLA	Zhao DG."Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)".journal of crystal growth 203.1-2(1999):40-44.