InP-based optoelectronic devices for optical fiber communications

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	InP-based optoelectronic devices for optical fiber communications
	Luo Y ; Chen LH ; Li TN
刊名	czechoslovak journal of physics
	1999
卷号	49 期号:5 页码:751-756
关键词	FEEDBACK SEMICONDUCTOR-LASERS
ISSN号	0011-4626
通讯作者	luo y,tsing hua univ,dept elect engn,state key lab integrated optoelect,beijing 100084,peoples r china.
中文摘要	in this contribution we report the research and development of 1.55 mu m ingaasp/inp gain-coupled dfb laser with an improved injection-carrier induced grating and of high performance 1.3 mu m and 1.55 mu m ingaasp/inp fp and dfb lasers for communications. long wavelength strained mqw laser diodes with a very low threshold current (7-10 ma) have been fabricated. low pressure movpe technology has been employed for the preparation of the layered structure. a novel gain-coupled dfb laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. the laser structures have been prepared by hybrid growth of movpe and lpe techniques and reasonably good characteristics have been achieved for resultant lasers. high performance 1.3 mu m and 1.55 mu m ingaasp/inp dfb lasers have successfully been developed for catv and trunk line optical fiber communication.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12882]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Luo Y,Chen LH,Li TN. InP-based optoelectronic devices for optical fiber communications[J]. czechoslovak journal of physics,1999,49(5):751-756.
APA	Luo Y,Chen LH,&Li TN.(1999).InP-based optoelectronic devices for optical fiber communications.czechoslovak journal of physics,49(5),751-756.
MLA	Luo Y,et al."InP-based optoelectronic devices for optical fiber communications".czechoslovak journal of physics 49.5(1999):751-756.