High-density InAs nanowires realized in situ on (100) InP

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	High-density InAs nanowires realized in situ on (100) InP
	Li HX ; Wu J ; Wang ZG ; Daniels-Race T
刊名	applied physics letters
	1999
卷号	75 期号:8 页码:1173-1175
关键词	MOLECULAR-BEAM EPITAXY VAPOR-PHASE EPITAXY QUANTUM WIRES ISLANDS GAAS INP(001) MORPHOLOGY ARRAYS
ISSN号	0003-6951
通讯作者	li hx,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	high-density inas nanowires embedded in an in0.52al0.48as matrix are fabricated in situ by molecular beam epitaxy on (100) inp. the average cross section of the nanowires is 4.5 x 10 nm(2). the linear density is as high as 70 wires/mu m. the spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. large polarization anisotropic effect is observed in polarized photoluminescence measurements. (c) 1999 american institute of physics. [s0003-6951(99)04134-0].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12838]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li HX,Wu J,Wang ZG,et al. High-density InAs nanowires realized in situ on (100) InP[J]. applied physics letters,1999,75(8):1173-1175.
APA	Li HX,Wu J,Wang ZG,&Daniels-Race T.(1999).High-density InAs nanowires realized in situ on (100) InP.applied physics letters,75(8),1173-1175.
MLA	Li HX,et al."High-density InAs nanowires realized in situ on (100) InP".applied physics letters 75.8(1999):1173-1175.