Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers

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	Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers
	Zhang MH ; Huang Q ; Zhang YF ; Zhou JM ; Li Q ; Xu ZY
刊名	applied physics letters
	1999
卷号	75 期号:10 页码:1366-1368
关键词	MOLECULAR-BEAM EPITAXY GAAS LAYERS DEPENDENCE LIFETIME
ISSN号	0003-6951
通讯作者	zhang mh,chinese acad sci,inst phys,pob 603,beijing 100080,peoples r china.
中文摘要	at a medium substrate temperature of 400 degrees c and a lower as flux, we have grown an ultrafast algaas/gaas photorefractive multiple quantum well (mqw) structure by molecular beam epitaxy. the as-grown sample exhibits strong photorefractive effect under the transverse frantz-keldysh geometry. a peak electroabsorption of 2100 cm(-1) is measured in the as-grown sample in an 11 kv/cm dc electric field, and the peak photorefractive diffraction efficiency can be 1.2%. after postgrowth annealing, the photorefractive effect becomes weak and disappears in samples annealed above 700 degrees c. using optical transient current spectroscopy, deep levels are measured in these samples. it is found that deep levels are stable against annealing until 700 degrees c. using a pump-probe technique, carrier lifetimes are measured at room temperature. we find that the as-grown sample has a lifetime of 20 ps, while the 700 degrees c annealed sample has a lifetime of more than 200 ps. the ultrafast lifetime in the as-grown sample is caused by point defects, not by as clusters. our result show that algaas/gaas mqw structure grown around 400 degrees c has better performance of the photorefractive effect. (c) 1999 american institute of physics. [s0003-6951(99)04036-x].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12828]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang MH,Huang Q,Zhang YF,et al. Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers[J]. applied physics letters,1999,75(10):1366-1368.
APA	Zhang MH,Huang Q,Zhang YF,Zhou JM,Li Q,&Xu ZY.(1999).Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers.applied physics letters,75(10),1366-1368.
MLA	Zhang MH,et al."Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers".applied physics letters 75.10(1999):1366-1368.