Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices

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	Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices
	Wang JN ; Sun BQ ; Wang XR ; Wang HL
刊名	solid state communications
	1999
卷号	112 期号:7 页码:371-374
关键词	semiconductors tunneling ELECTRIC-FIELD DOMAINS DOPED SEMICONDUCTOR SUPERLATTICES MODEL INSTABILITIES DIODES GAAS-ALAS SUPERLATTICES
ISSN号	0038-1098
通讯作者	wang jn,hong kong univ sci & technol,dept phys,hong kong,peoples r china.
中文摘要	we investigate the transition from static to dynamic electric field domains (efds) in a doped gaas/alas superlattice (sl). we show that a transverse magnetic field and/or the temperature can induce current self-oscillations. this observation can be attributed to the negative differential resistance (ndr) effect. transverse magnetic field and the temperature can increase the ndr of a doped sl. a large ndr can lead to an unstable efd in a certain range of d.c. bias. (c) 1999 elsevier science ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12788]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang JN,Sun BQ,Wang XR,et al. Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices[J]. solid state communications,1999,112(7):371-374.
APA	Wang JN,Sun BQ,Wang XR,&Wang HL.(1999).Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices.solid state communications,112(7),371-374.
MLA	Wang JN,et al."Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices".solid state communications 112.7(1999):371-374.