Photovoltaic effect of cubic GaN/GaAs(100)

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Photovoltaic effect of cubic GaN/GaAs(100)
	Jiang DS; Zhao DG; Yang H; Yang H; Li JB
刊名	applied physics letters
	1999
卷号	75 期号:24 页码:3823-3825
关键词	GAN
ISSN号	0003-6951
通讯作者	zhao dg,chinese acad sci,inst semicond,natl res ctr optoelect technol,pob 912,beijing 100083,peoples r china.
中文摘要	we have studied the photovoltaic effect in cubic gan on gaas at room temperature. the photovoltaic spectra of cubic gan epitaxial film were concealed by the photovoltaic effect from the gaas substrate unless additional illumination of a 632.8 nm he-ne laser beam was used to remove the interference of the gaas absorption in the measurement. on the basis of the near-band-edge photovoltaic spectra of cubic gan, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 mu m for two undoped n-type cubic gan samples with background concentrations of 10(14) and 10(18) cm(-3), respectively. (c) 1999 american institute of physics. [s0003-6951(99)00450-7].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12748]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang DS,Zhao DG,Yang H,et al. Photovoltaic effect of cubic GaN/GaAs(100)[J]. applied physics letters,1999,75(24):3823-3825.
APA	Jiang DS,Zhao DG,Yang H,Yang H,&Li JB.(1999).Photovoltaic effect of cubic GaN/GaAs(100).applied physics letters,75(24),3823-3825.
MLA	Jiang DS,et al."Photovoltaic effect of cubic GaN/GaAs(100)".applied physics letters 75.24(1999):3823-3825.