Photovoltaic effect of cubic GaN/GaAs(100) | |
Jiang DS![]() ![]() ![]() | |
刊名 | applied physics letters
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1999 | |
卷号 | 75期号:24页码:3823-3825 |
关键词 | GAN |
ISSN号 | 0003-6951 |
通讯作者 | zhao dg,chinese acad sci,inst semicond,natl res ctr optoelect technol,pob 912,beijing 100083,peoples r china. |
中文摘要 | we have studied the photovoltaic effect in cubic gan on gaas at room temperature. the photovoltaic spectra of cubic gan epitaxial film were concealed by the photovoltaic effect from the gaas substrate unless additional illumination of a 632.8 nm he-ne laser beam was used to remove the interference of the gaas absorption in the measurement. on the basis of the near-band-edge photovoltaic spectra of cubic gan, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 mu m for two undoped n-type cubic gan samples with background concentrations of 10(14) and 10(18) cm(-3), respectively. (c) 1999 american institute of physics. [s0003-6951(99)00450-7]. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/12748] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Jiang DS,Zhao DG,Yang H,et al. Photovoltaic effect of cubic GaN/GaAs(100)[J]. applied physics letters,1999,75(24):3823-3825. |
APA | Jiang DS,Zhao DG,Yang H,Yang H,&Li JB.(1999).Photovoltaic effect of cubic GaN/GaAs(100).applied physics letters,75(24),3823-3825. |
MLA | Jiang DS,et al."Photovoltaic effect of cubic GaN/GaAs(100)".applied physics letters 75.24(1999):3823-3825. |
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