The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator

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	The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator
	Li JM
刊名	semiconductor science and technology
	2000
卷号	15 期号:2 页码:l6-l9
关键词	ION-IMPLANTATION HYDROGEN OXYGEN
ISSN号	0268-1242
通讯作者	li jm,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china.
中文摘要	a surface-region-purification-induced p-n junction, a puzzle discovered at brookhaven national laboratory, in a silicon-on-defect-layer (sodl) material has been explored by carrying out various annealing conditions and subsequent measurements on electrical properties. the origin of the pn junction has been experimentally investigated. furthermore, the p-n junction has been transformed into a p-i-n electrical structure by adding a high temperature annealing process to the previously used sodl procedure, making the sodl material approach silicon on insulator (soi). the control of the initial oxygen amount in the silicon material is suggested to be critical for the experimental results.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12680]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li JM. The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator[J]. semiconductor science and technology,2000,15(2):l6-l9.
APA	Li JM.(2000).The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator.semiconductor science and technology,15(2),l6-l9.
MLA	Li JM."The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator".semiconductor science and technology 15.2(2000):l6-l9.