Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers

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	Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
	Ye XL; Xu B
刊名	journal of crystal growth
	2000
卷号	210 期号:4 页码:451-457
关键词	InAs quantum dots molecular beam epitaxy photoluminescence LINE-SHAPE
ISSN号	0022-0248
通讯作者	liu hy,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	we have investigated the temperature and excitation power dependence of photoluminescence properties of inas self-assembled quantum dots grown between two al0.5ga0.5as quantum wells. the temperature evolutions of the lower-and higher-energy transition in the photoluminescence spectra have been observed. the striking result is that a higher-energy peak appears at 105 k and its relative intensity increases with temperature in the 105-291 k range. we demonstrate that the higher-energy peak corresponds to the excited-state transition involving the bound-electron state of quantum dots and the two-dimensional hole continuum of wetting layer. at higher temperature, the carrier transition associated with the wetting layer dominates the photoluminescence spectra. a thermalization model is given to explain the process of hole thermal transfer between wetting layer and quantum dots. (c) 2000 published by elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12656]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Xu B. Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers[J]. journal of crystal growth,2000,210(4):451-457.
APA	Ye XL,&Xu B.(2000).Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers.journal of crystal growth,210(4),451-457.
MLA	Ye XL,et al."Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers".journal of crystal growth 210.4(2000):451-457.