Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy

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	Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
	Xu B; Ye XL
刊名	journal of crystal growth
	2000
卷号	212 期号:1-2 页码:356-359
关键词	rapid thermal annealing InGaAs/GaAs quantum dots molecular beam epitaxy LUMINESCENCE FABRICATION GAAS(100) INTERFACE LASER LAYER
ISSN号	0022-0248
通讯作者	jiang wh,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	postgrowth rapid thermal annealing was performed on ingaas/gaas quantum dots grown by molecular beam epitaxy. the blue shift of the emission peak and the narrowing of the luminescence line width are observed at lower annealing temperature. however, when the annealing temperature is increased to 850 degrees c, the emission line width becomes larger. the tem image of this sample shows that the surface becomes rough, and some large clusters are formed, which is due to the interdiffusion of in, ga atoms at the ingaas/gaas interface and to the strain relaxation. the material is found to degrade dramatically when the annealing temperature is further increased to 900 degrees c, while emission from quantum dots can still be detected, along with the appearance of the emission from excited state. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12630]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Ye XL. Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy[J]. journal of crystal growth,2000,212(1-2):356-359.
APA	Xu B,&Ye XL.(2000).Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy.journal of crystal growth,212(1-2),356-359.
MLA	Xu B,et al."Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy".journal of crystal growth 212.1-2(2000):356-359.