Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe

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	Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe
	Li DZ ; Huang CJ ; Cheng BW ; Wang HJ ; Yu Z ; Zhang CH ; Yu JZ ; Wang QM
刊名	journal of crystal growth
	2000
卷号	213 期号:3-4 页码:308-311
关键词	SiGe UHV/CVD RHEED Raman scattering SILICON RELAXATION
ISSN号	0022-0248
通讯作者	li dz,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china.
中文摘要	a low-temperature si0.8ge0.2 (lt-si0.8ge0.2) interlayer was grown at 500 degrees c to improve the relaxed si0.8ge0.2 surface and reduce the dislocation density in it, which was confirmed by the change of reflective high-energy electron diffraction (rheed) pattern from spotty to streaky and etch pits counts. for the same extent of strain; the threading dislocation density was reduced from 8 x 10(7) cm(-2) in the latter to 2 x 10(6) cm(-2) in the former. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12580]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li DZ,Huang CJ,Cheng BW,et al. Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe[J]. journal of crystal growth,2000,213(3-4):308-311.
APA	Li DZ.,Huang CJ.,Cheng BW.,Wang HJ.,Yu Z.,...&Wang QM.(2000).Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe.journal of crystal growth,213(3-4),308-311.
MLA	Li DZ,et al."Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe".journal of crystal growth 213.3-4(2000):308-311.