The fabrication of thick SiO2 layer by anodization

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	The fabrication of thick SiO2 layer by anodization
	Ou HY ; Yang QQ ; Lei HB ; Wang QM ; Hu XW
刊名	optical materials
	2000
卷号	14 期号:3 页码:271-275
关键词	thick SiO2 layer porous silicon SiO2/Si waveguide device WAVE-GUIDES SILICON
ISSN号	0925-3467
通讯作者	ou hy,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china.
中文摘要	silicon-based silica waveguide (sio2/si) devices have huge applications in optical telecommunication. sio2 up to 25-mu m thick is necessary for some passive sio2/si waveguide devices. oxidizing porous silicon to obtain thick sio2 as cladding layer is presented. the experimental results of porous layer and oxidized porous layer formation were given. the relationship between cracking of sio2 and temperature varying rate was given experimentally. such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent sio2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12568]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ou HY,Yang QQ,Lei HB,et al. The fabrication of thick SiO2 layer by anodization[J]. optical materials,2000,14(3):271-275.
APA	Ou HY,Yang QQ,Lei HB,Wang QM,&Hu XW.(2000).The fabrication of thick SiO2 layer by anodization.optical materials,14(3),271-275.
MLA	Ou HY,et al."The fabrication of thick SiO2 layer by anodization".optical materials 14.3(2000):271-275.